IRF6665TRPBF
| Part No | IRF6665TRPBF |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 100V 4.2A DIRECTFET |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
36691
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5162 | |
| 10 | 0.5058 | |
| 100 | 0.4904 | |
| 1000 | 0.4749 | |
| 10000 | 0.4542 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.95 mm |
| Height | 506 µm |
| Length | 4.826 mm |
| Fall Time | 4.3 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| Rise Time | 2.8 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 62 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 5 V |
| Current Rating | 4.2 A |
| Number of Pins | 3 |
| Contact Plating | Tin |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 4800 |
| Input Capacitance | 530 pF |
| Power Dissipation | 42 W |
| Threshold Voltage | 5 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 7.4 ns |
| On-State Resistance | 62 mΩ |
| Radiation Hardening | No |
| Turn-Off Delay Time | 14 ns |
| Voltage Rating (DC) | 100 V |
| Element Configuration | Single |
| Max Power Dissipation | 2.2 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -40 °C |
| Drain to Source Resistance | 53 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 4.2 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
