IPD80R1K0CEATMA1
| Part No | IPD80R1K0CEATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 800V 5.7A TO252-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
16074
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.395 | |
| 10 | 1.3671 | |
| 100 | 1.3253 | |
| 1000 | 1.2834 | |
| 10000 | 1.2276 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 3.949996 g |
| Fall Time | 8 ns |
| Lead Free | Lead Free |
| Packaging | Tape & Reel |
| Rise Time | 15 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 950 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TO-252-3 |
| Number of Pins | 3 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 2500 |
| Input Capacitance | 785 pF |
| Power Dissipation | 83 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25 ns |
| On-State Resistance | 950 mΩ |
| Turn-Off Delay Time | 72 ns |
| Element Configuration | Single |
| Max Power Dissipation | 83 W |
| Max Dual Supply Voltage | 800 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 800 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 5.7 A |
| Drain to Source Voltage (Vdss) | 800 V |
| Drain to Source Breakdown Voltage | 800 V |
