IPB042N10N3GATMA1
| Part No | IPB042N10N3GATMA1 |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 100V 100A D2PAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
33220
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.6312 | |
| 10 | 2.5786 | |
| 100 | 2.4996 | |
| 1000 | 2.4207 | |
| 10000 | 2.3155 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 4.7 mm |
| Fall Time | 14 ns |
| Lead Free | Contains Lead |
| Packaging | Tape & Reel |
| Rise Time | 59 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | D2PAK |
| Halogen Free | Halogen Free |
| Number of Pins | 3 |
| Lifecycle Status | Production (Last Updated: 2 years ago) |
| Package Quantity | 1000 |
| Input Capacitance | 6.32 nF |
| Power Dissipation | 214 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 27 ns |
| On-State Resistance | 4.2 mΩ |
| Radiation Hardening | No |
| Turn-Off Delay Time | 48 ns |
| Max Dual Supply Voltage | 100 V |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 3.6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 100 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Drain to Source Breakdown Voltage | 100 V |
