| Products Specifications | |
|---|---|
| Collector Cut-Off Current (Icbo) | 500nA |
| Collector-Emitter Breakdown Voltage (Vceo) | 11V |
| Power Dissipation (Pd) | 310mW |
| Collector Current (Ic) | 50mA |
| DC Current Gain (hFE@Ic,Vce) | 56@5mA,10V |
| Transition Frequency (fT) | 3.2GHz |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 500mV@25mA,5mA |
| Transistor Type | NPN |
| Operating Temperature | -55u2103~+150u2103@(Tj) |
