SQ2318AES-T1_GE3
| Part No | SQ2318AES-T1_GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CHAN 40V SOT23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
47604
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5742 | |
| 10 | 0.5627 | |
| 100 | 0.5455 | |
| 1000 | 0.5283 | |
| 10000 | 0.5053 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 5.7 ns |
| Rise Time | 8.4 ns |
| REACH SVHC | No SVHC |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SOT-23 |
| Number of Pins | 3 |
| Contact Plating | Tin |
| Power Dissipation | 3 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Turn-On Delay Time | 7.5 ns |
| Turn-Off Delay Time | 12 ns |
| Max Power Dissipation | 3.3 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 26 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 8 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | 40 V |
| Drain to Source Breakdown Voltage | 40 V |
