SISA18ADN-T1-GE3
| Part No | SISA18ADN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 38.3A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
17870
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6324 | |
| 10 | 0.6198 | |
| 100 | 0.6008 | |
| 1000 | 0.5818 | |
| 10000 | 0.5565 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Fall Time | 7 ns |
| Packaging | Tape & Reel (TR) |
| Rise Time | 10 ns |
| REACH SVHC | Unknown |
| Rds On Max | 7.5 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 1 nF |
| Power Dissipation | 19.8 W |
| Threshold Voltage | 1.2 V |
| Number of Elements | 1 |
| Radiation Hardening | No |
| Turn-Off Delay Time | 15 ns |
| Element Configuration | Single |
| Max Power Dissipation | 19.8 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 9.6 mΩ |
| Gate to Source Voltage (Vgs) | -16 V |
| Continuous Drain Current (ID) | 38.3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
