SISA10DN-T1-GE3
| Part No | SISA10DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 30A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
15102
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.07 | |
| 10 | 1.0486 | |
| 100 | 1.0165 | |
| 1000 | 0.9844 | |
| 10000 | 0.9416 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.4 mm |
| Height | 1.12 mm |
| Length | 3.4 mm |
| Fall Time | 20 ns |
| REACH SVHC | Unknown |
| Rds On Max | 3.7 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Input Capacitance | 2.425 nF |
| Power Dissipation | 3.6 W |
| Threshold Voltage | 1.1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 27 ns |
| Element Configuration | Dual |
| Max Power Dissipation | 39 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 3.7 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 30 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
