SIA413DJ-T1-GE3
| Part No | SIA413DJ-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 12V 12A SC70-6 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22878
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.981 | |
| 10 | 0.9614 | |
| 100 | 0.932 | |
| 1000 | 0.9025 | |
| 10000 | 0.8633 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 2.05 mm |
| Height | 750 µm |
| Length | 2.05 mm |
| Fall Time | 40 ns |
| Lead Free | Lead Free |
| Rise Time | 40 ns |
| REACH SVHC | Unknown |
| Rds On Max | 29 mΩ |
| Resistance | 29 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | -1 V |
| Case/Package | SC |
| Number of Pins | 6 |
| Contact Plating | Tin |
| Input Capacitance | 1.8 nF |
| Power Dissipation | 3.5 W |
| Threshold Voltage | -1 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 20 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70 ns |
| Element Configuration | Single |
| Max Power Dissipation | 19 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 29 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 10 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drain to Source Breakdown Voltage | -12 V |
