SI7478DP-T1-E3
| Part No | SI7478DP-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 60V 15A PPAK SO-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
18881
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.5482 | |
| 10 | 2.4972 | |
| 100 | 2.4208 | |
| 1000 | 2.3443 | |
| 10000 | 2.2424 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 5.89 mm |
| Height | 1.04 mm |
| Length | 4.9 mm |
| Weight | 506.605978 mg |
| Fall Time | 20 ns |
| Lead Free | Lead Free |
| Rise Time | 20 ns |
| REACH SVHC | Unknown |
| Rds On Max | 7.5 mΩ |
| Resistance | 7.5 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Number of Pins | 8 |
| Power Dissipation | 1.9 W |
| Threshold Voltage | 3 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 25 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 115 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.9 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7.5 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 15 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
