SI7129DN-T1-GE3
| Part No | SI7129DN-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 35A 1212-8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
22899
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0925 | |
| 10 | 1.0707 | |
| 100 | 1.0379 | |
| 1000 | 1.0051 | |
| 10000 | 0.9614 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 3.05 mm |
| Height | 1.04 mm |
| Length | 3.05 mm |
| Fall Time | 14 ns |
| Lead Free | Lead Free |
| Rise Time | 43 ns |
| Rds On Max | 11.4 mΩ |
| Resistance | 11.4 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TO-252-3 |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Input Capacitance | 3.345 nF |
| Power Dissipation | 3.8 W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 50 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 36 ns |
| Max Power Dissipation | 52.1 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -50 °C |
| Drain to Source Resistance | 16 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 14.4 A |
| Drain to Source Voltage (Vdss) | 30 V |
