SI4463CDY-T1-GE3
| Part No | SI4463CDY-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CHAN 2.5V SO8 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19382
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.801 | |
| 10 | 0.785 | |
| 100 | 0.761 | |
| 1000 | 0.7369 | |
| 10000 | 0.7049 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.75 mm |
| Weight | 506.605978 mg |
| Fall Time | 11 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 10 ns |
| REACH SVHC | No SVHC |
| Resistance | 8 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | SO |
| Number of Pins | 8 |
| Contact Plating | Tin |
| Power Dissipation | 2.7 W |
| Threshold Voltage | -600 mV |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 70 ns |
| Element Configuration | Single |
| Max Power Dissipation | 5 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6 mΩ |
| Gate to Source Voltage (Vgs) | 12 V |
| Continuous Drain Current (ID) | -13.6 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | -20 V |
| Drain to Source Breakdown Voltage | -20 V |
