SI3456DDV-T1-GE3
| Part No | SI3456DDV-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 30V 6.3A 6-TSOP |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
26939
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4879 | |
| 10 | 0.4781 | |
| 100 | 0.4635 | |
| 1000 | 0.4489 | |
| 10000 | 0.4294 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Weight | 19.986414 mg |
| Fall Time | 13 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 13 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 40 mΩ |
| Resistance | 40 mΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Case/Package | TSOP |
| Number of Pins | 6 |
| Input Capacitance | 325 pF |
| Power Dissipation | 1.7 W |
| Threshold Voltage | 1.2 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 12 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Max Power Dissipation | 1.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 40 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Breakdown Voltage | 30 V |
