SI2374DS-T1-GE3
| Part No | SI2374DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CHAN 20V SOT23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19346
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4278 | |
| 10 | 0.4192 | |
| 100 | 0.4064 | |
| 1000 | 0.3936 | |
| 10000 | 0.3765 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Height | 1.12 mm |
| Fall Time | 9 ns |
| Lead Free | Lead Free |
| Rise Time | 22 ns |
| REACH SVHC | No SVHC |
| Schedule B | 8541210080, 8541210080|8541210080, 8541210080|8541210080|8541210080, 8541210080|8541210080|8541210080|8541210080 |
| Case/Package | SOT-23-3 |
| Number of Pins | 3 |
| Power Dissipation | 960 mW |
| Threshold Voltage | 1 V |
| Number of Channels | 1 |
| Turn-On Delay Time | 4 ns |
| Turn-Off Delay Time | 16 ns |
| Max Power Dissipation | 1.7 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 25 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Continuous Drain Current (ID) | 4.5 A |
| Max Junction Temperature (Tj) | 150 °C |
| Drain to Source Voltage (Vdss) | 20 V |
| Drain to Source Breakdown Voltage | 20 V |
