SI2303BDS-T1-E3
| Part No | SI2303BDS-T1-E3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 30V 1.49A SOT23-3 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 1.4 mm |
| Height | 1.02 mm |
| Length | 3.04 mm |
| Current | 164 A |
| Voltage | 30 V |
| Fall Time | 40 ns |
| Lead Free | Lead Free |
| Packaging | Cut Tape |
| Rise Time | 40 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 200 mΩ |
| Resistance | 200 mΩ |
| Nominal Vgs | -3 V |
| Case/Package | SOT-23 |
| Number of Pins | 3 |
| Input Capacitance | 180 pF |
| Power Dissipation | 700 mW |
| Threshold Voltage | -3 V |
| Max Supply Voltage | 36 V |
| Min Supply Voltage | 13 V |
| Number of Elements | 1 |
| Turn-On Delay Time | 55 ns |
| Radiation Hardening | No |
| Turn-Off Delay Time | 10 ns |
| Element Configuration | Single |
| Max Power Dissipation | 700 mW |
| Max Dual Supply Voltage | 22 V |
| Min Dual Supply Voltage | 7 V |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 200 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 1.3 A |
| Drain to Source Voltage (Vdss) | -30 V |
| Drain to Source Breakdown Voltage | 30 V |



