| Vgs(th) (Max) @ Id | 4V @ 250µA |
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| Vgs (Max) | ±30V |
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| Technology | MOSFET (Metal Oxide) |
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| Supplier Device Package | TO-262 |
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| Series | aMOS™ |
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| Rds On (Max) @ Id, Vgs | 650 mOhm @ 3.5A, 10V |
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| Power Dissipation (Max) | 104W (Tc) |
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| Packaging | Tube |
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| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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| Other Names | 785-1527-5
AOW7S65-ND |
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| Operating Temperature | -55°C ~ 150°C (TJ) |
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| Mounting Type | Through Hole |
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| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
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| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
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| Input Capacitance (Ciss) (Max) @ Vds | 434pF @ 100V |
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| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
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| FET Type | N-Channel |
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| FET Feature | - |
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| Drive Voltage (Max Rds On, Min Rds On) | 10V |
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| Drain to Source Voltage (Vdss) | 650V |
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| Detailed Description | N-Channel 650V 7A (Tc) 104W (Tc) Through Hole TO-262 |
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| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
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